The conductivity of BaSnO3 ceramics have been measured at elevated temperat
ure as a function of oxygen partial pressure. The experimental data allows
us to propose that the dominant defect in BaSnO3 is an oxygen vacancy. The
effects of doping with Sb2O3 bn the electrical properties of BaSnO3 have be
en investigated. The dependence of the resistivity value of Ba(Sn,Sb)O-3 ma
terials on the doping content has a pronounced minimum at the molar concent
ration of Sb2O3 about 2%. At first the introduction of Sb2O3 results in a s
ignificant decrease of the resistivity of BaSnO3, the successive increase o
f Sb2O3 results in the appearance of the insulator phases. This leads to th
e increase of the resistivity value of Ba(Sn,Sb)O-3 materials. No variation
of the crystal cell parameter is observed under the doping procedure. The
resistance characteristics of Ba(Sn,Sb)O-3 materials as a function of tempe
rature show that Ba(Sn,Sb)O-3 is a kind of electroceramics with low activat
ion energy. (C) 2000 Elsevier Science S.A. All rights reserved.