Structural and electrical properties of Ba(Sn,Sb)O-3 electroceramics materials

Citation
Wz. Lu et al., Structural and electrical properties of Ba(Sn,Sb)O-3 electroceramics materials, SENS ACTU-A, 80(1), 2000, pp. 35-37
Citations number
6
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
80
Issue
1
Year of publication
2000
Pages
35 - 37
Database
ISI
SICI code
0924-4247(20000301)80:1<35:SAEPOB>2.0.ZU;2-T
Abstract
The conductivity of BaSnO3 ceramics have been measured at elevated temperat ure as a function of oxygen partial pressure. The experimental data allows us to propose that the dominant defect in BaSnO3 is an oxygen vacancy. The effects of doping with Sb2O3 bn the electrical properties of BaSnO3 have be en investigated. The dependence of the resistivity value of Ba(Sn,Sb)O-3 ma terials on the doping content has a pronounced minimum at the molar concent ration of Sb2O3 about 2%. At first the introduction of Sb2O3 results in a s ignificant decrease of the resistivity of BaSnO3, the successive increase o f Sb2O3 results in the appearance of the insulator phases. This leads to th e increase of the resistivity value of Ba(Sn,Sb)O-3 materials. No variation of the crystal cell parameter is observed under the doping procedure. The resistance characteristics of Ba(Sn,Sb)O-3 materials as a function of tempe rature show that Ba(Sn,Sb)O-3 is a kind of electroceramics with low activat ion energy. (C) 2000 Elsevier Science S.A. All rights reserved.