NEW AND POSSIBLE FUTURE-TRENDS IN INDUCTIVELY-COUPLED PLASMAS (ICPS) FOR SEMICONDUCTOR PROCESSING

ICPs have become one of the dominant high-density plasma sources for e tching. More variations of ICP etch sources are currently being develo ped and inductive systems for high-density plasma deposition are also being developed. In addition, helicon inductive sources are being deve loped in single loop and spiral antenna configurations. In the future these two fields may merge to combine the optimum features of both sys tems. The physics of low-pressure ICP systems will be discussed. Exper imental effects of multipole magnetic fields near the rf coil will be described as they relate to low pressure and electronegative gases.