A novel high performance die attach

Au/In isothermal solidification technique was evaluated as an alternative m ethod for high performance die attachment. Bonding could be achieved at tem peratures between 250 degrees C-3008C for about five to ten seconds. The mi crostructures of the bonds were studied and their effects on the reliabilit y analysed. The quality of the bonds depends very much on the surface wavin ess of the substrate. For high quality substrates, bonding was successfully achieved on 3mm x 3mm dies, which is almost one order of magnitude bigger than the die size achievable for Au/Si eutectic bonding, and the bonds show no obvious degradation after 2,800 cycles between -55 degrees C to 125 deg rees C.