Atomic-hydrogen-induced self-organization of Si(111) root 3 x root 3-In surface phase studied by CAICISS and STM

Using coaxial impact collision ion scattering spectroscopy (CAICISS), scann ing tunneling microscopy (STM), and low-energy electron diffraction (LEED) techniques, we have investigated the interaction of atomic hydrogen with th e Si(111)root 3 x root 3-In surface phase at elevated temperatures and stru ctural behavior of In clusters induced by the interaction. Upon atomic hydr ogen interaction, Si-In bonds are broken and replaced by Si-H bonds. As a r esult, the root 3 x root 3 reconstruction is destroyed and small In cluster s are formed on hydrogen-terminated Si(111)1 x 1 surface. Using STM, we als o have found that the size of the In cluster increases with increasing subs trate temperature during hydrogen exposure of the root 3 x root 3-In surfac e phase. From CAICISS experimental results, we have found that atomic-hydro gen-induced In clusters for Si(111)root 3 x root 3-In surface phase have an In(100) crystalline structure, while those for Si(001)4 x 3-In surface pha se are polycrystalline. In conclusion, we have found that structural differ ences of surface give rise to different atomic-hydrogen-induced self-organi zation. (C) 2000 Elsevier Science B.V. All rights reserved.