Effect of thermal oxidation on indentation and scratching of single-crystal silicon carbide on microscale

Indentation and scratching experiments were conducted on single-crystal SiC ceramic with and without thermal oxidation treatment, single-crystal Si an d amorphous SiO2 using a modified atomic force/friction force microscope wi th a sharp diamond tip. Auger analysis was used to identify various compoun d layers present on the untreated and oxidized samples. It was found that n anoindentation hardness and scratch resistance were affected by thermal oxi dation and decreased with increasing oxide layer thickness. The surface pro perties of SiC samples oxidized at 1050 degrees C for 10 h were similar to those of bulk silica. (C) 2000 Elsevier Science S.A. All rights reserved.