Synchrotron X-ray diffraction evidence for native defects in the photovoltaic semiconductor CuInSe2

Authors
Kaplan, L Leitus, G Lyakhovitskaya, V Frolow, F Hallak, H Kvick, A Cahen, D
Citation
L. Kaplan et al., Synchrotron X-ray diffraction evidence for native defects in the photovoltaic semiconductor CuInSe2, ADVAN MATER, 12(5), 2000, pp. 366
Citations number
32
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
12
Issue
5
Year of publication
2000
Database
ISI
SICI code
0935-9648(20000302)12:5<366:SXDEFN>2.0.ZU;2-H
Abstract
CuInSe2 is a semiconductor used in solar cells that has appreciable Cu ion conductivity. These authors have used 0.25 Angstrom synchrotron X-radiation to analyze its structure. It is shown that the application of a strong ele ctric field leads to a decrease in electron density on the Cu sites, which sheds light on the role of Cu electromigration in transistor formation (see Figure) and in the photovoltaic activity of CuInSe2.