Electro-optic modulation is demonstrated in 10-mu m-thick single-crystal Li
NbO3 films obtained by crystal ion slicing. This technique uses ion implant
ation of single-crystal bulk samples followed by selective etching. The mea
sured electro-optic response of these films is comparable, within experimen
tal error, to that of single-crystal bulk LiNbO3 and is superior to previou
sly reported values for epitaxial polycrystalline thin films. The product o
f half-wave voltage and modulator length, VpiL, is 8 V cm. Post lift-off an
nealing is shown to be of key importance in improving the modulator extinct
ion ratio. (C) 2000 American Institute of Physics. [S0003-6951(00)01211-0].