Evolution of sp(2) bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy

Citation
M. Chhowalla et al., Evolution of sp(2) bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy, APPL PHYS L, 76(11), 2000, pp. 1419-1421
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
11
Year of publication
2000
Pages
1419 - 1421
Database
ISI
SICI code
0003-6951(20000313)76:11<1419:EOSBWD>2.0.ZU;2-I
Abstract
Two transitions in the bonding are found in tetrahedral amorphous carbon (t a-C) films as a function of deposition temperature. The total sp(3) fractio n shows a sharp decrease at a transition temperature of order 250 degrees C . In contrast, visible Raman finds that the sp(2) sites show a gradual orde ring into the graphitic clusters through the sharp bonding transition. The optical gap and resistivity show a similar, gradual transition. This indica tes that the sp(2) cluster size determines the optical gap, even when the s p(2) content does not change. The Raman I(D)/I(G) peak ratio is found to va ry inversely with the square of the gap. (C) 2000 American Institute of Phy sics. [S0003-6951(00)02311-1].