Strain-dependent electrical resistance of tin-doped indium oxide on polymer substrates

Citation
Dr. Cairns et al., Strain-dependent electrical resistance of tin-doped indium oxide on polymer substrates, APPL PHYS L, 76(11), 2000, pp. 1425-1427
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
11
Year of publication
2000
Pages
1425 - 1427
Database
ISI
SICI code
0003-6951(20000313)76:11<1425:SEROTI>2.0.ZU;2-M
Abstract
The increase in sheet resistance of indium-tin-oxide (ITO) films on polyeth ylene terephthalate with increasing tensile strain is reported. The increas e in resistance is related to the number of cracks in the conducting layer which depends upon applied strain and film thickness. We propose a simple m odel that describes the finite but increasing resistance in the cracked ITO layer in terms of a small volume of conducting material within each crack. (C) 2000 American Institute of Physics. [S0003-6951(00)02710-8].