Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures

Authors
Hogg, RA Norman, CE Shields, AJ Pepper, M Iizuka, N
Citation
Ra. Hogg et al., Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures, APPL PHYS L, 76(11), 2000, pp. 1428-1430
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
11
Year of publication
2000
Pages
1428 - 1430
Database
ISI
SICI code
0003-6951(20000313)76:11<1428:COSAPP>2.0.ZU;2-T
Abstract
We report a luminescence study of GaN/Al0.65Ga0.35N multi-quantum-well stru ctures. The surface of the samples exhibits microcracking allowing the same quantum well to be measured under two different strain conditions. We can accurately describe the emission energies in the two strain conditions by c onsidering piezoelectric polarization alone in contrast to the theoretical prediction that spontaneous polarization effects should dominate. (C) 2000 American Institute of Physics. [S0003-6951(00)03611-1].