Imaging and local current transport measurements of AlInP quantum dots grown on GaP

Authors
Reddy, CV Narayanamurti, V Ryou, JH Chowdhury, U Dupuis, RD
Citation
Cv. Reddy et al., Imaging and local current transport measurements of AlInP quantum dots grown on GaP, APPL PHYS L, 76(11), 2000, pp. 1437-1439
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
11
Year of publication
2000
Pages
1437 - 1439
Database
ISI
SICI code
0003-6951(20000313)76:11<1437:IALCTM>2.0.ZU;2-W
Abstract
Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to in ject carriers directly into a single quantum dot, and thus, current transpo rt through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offs et between GaP and AlInP with a barrier height of Delta E(c)similar to 0.13 +/- 0.01 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)02911- 9].