BGaInAs alloys lattice matched to GaAs

We report the epitaxial growth of zinc-blende BxGa1-x-yInyAs and BxGa1-xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric -pressure metalorganic chemical vapor deposition. The band gap of BxGa1-xAs increases by only 4-8 meV/%B with increasing boron concentration in this c oncentration range. We demonstrate an epitaxial BxGa1-x-yInyAs layer deposi ted on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1-yInyAs layer with the same band gap. (C) 2000 Amer ican Institute of Physics. [S0003- 6951(00)02711-X].