S. An et Mj. Deen, Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes, IEEE DEVICE, 47(3), 2000, pp. 537-543
The current bias-dependence of low-frequency noise spectra in single growth
planar separate absorption, grading, charge, and multiplication (SAGCM) AP
D's was studied. We have also investigated the influence of process variati
ons on the noise spectra of the APD's. It was believed that devices process
ed with two types of processing (A and B) exhibited a lateral electric fiel
d component within the active area of the device. The process variations we
re clearly identified through the low-frequency noise performance of the de
vices. The decrease of the lateral component of an electric field within th
e active area of the device was correlated to changes in the device process
ing. It was found that a low temperature anneal of the device decreased the
level of low-frequency noise in the devices processed with treatments B an
d C.