Physical modeling of spiral inductors on silicon

This paper presents a physical model for planar spiral inductors on silicon , which accounts for eddy current effect in the conductor, crossover capaci tance between the spiral and center-tap, Capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of la yout and process parameters. This scalable inductor model enables the predi ction and optimization of inductor performance.