A probe detector for defectivity assessment in p-n junctions

In this paper, we present a process probe capable of measuring the avalanch e ignition rate of the generation centers, in order to investigate some pro cess-dependent morphological properties of p-n junctions. In particular, we report a nonlinear dependence of the defectivity with the area of circular junctions, which can be ascribed to a radially growing density of generati on centers, like dopant clusters. This hypothesis has been verified by mean s of both microscopic inspection of the probes and comparison with alternat ive probe geometries. Technological hints are finally provided to counterac t the defectivity, thus leading to potential improvements in the fabricatio n of microelectronic devices.