A channel resistance derivative method for effective channel length extraction in LDD MOSFET's

Authors
Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation
Gf. Niu et al., A channel resistance derivative method for effective channel length extraction in LDD MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 648-650
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
3
Year of publication
2000
Pages
648 - 650
Database
ISI
SICI code
0018-9383(200003)47:3<648:ACRDMF>2.0.ZU;2-4
Abstract
A channel resistance derivative method for extracting the electrical effect ive channel length and series resistance is proposed, and demonstrated on a n advanced 0.35 mu m LDD CMOS technology. A clear graphic image of the L-EF F and R-SD is obtained directly from the measured channel resistance and it s derivative with respect to the gate bias. The method also provides guidel ines for the proper gate bias range selection in traditional L-EFF extracti on techniques.