Enhanced corrugated QWIP performance using dielectric coverage

Authors
Citation
Nc. Das et Kk. Choi, Enhanced corrugated QWIP performance using dielectric coverage, IEEE DEVICE, 47(3), 2000, pp. 653-655
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
3
Year of publication
2000
Pages
653 - 655
Database
ISI
SICI code
0018-9383(200003)47:3<653:ECQPUD>2.0.ZU;2-2
Abstract
We report here the effect of dielectric/metal coverage on the performance o f the corrugated quantum well infrared photodetectors (C-QWIP) in two wavel ength regimes. We found that with proper nonabsorbing dielectrics, both the detector dark current and the spectral responsivity can be improved upon t he monitoring 45 degrees edge coupled QWIP. In the 8 mu m regime, the norma lized responsivity of a Si3N4 covered C-QWIP was found to be improved by 3. 3 times. In the 14 mu m regime, the improvement is a factor of 1.8 using Si 3N4, coverage and a factor of 2.5 using SiO2 coverage.