Oriented and polycrystalline NdNiO3 thin films on silicon substrate

NdNiO3 thin films deposited on Si(1 0 0) were prepared by RF sputtering and subsequent oxygen annealing. Films deposited at 250 degrees C are polycrys talline with a metal-insulator transition around 150 K. Films grown at 600 degrees C are oriented, with a transition temperature around 200 K as usual ly observed in bulk ceramics. To our knowledge it is the first time that or iented thin films synthesis of NdNiO3 on Si(1 0 0) is reported. Combination of X-ray diffraction and high-resolution electron microscopy was used for characterising the films. The relationship between microstructure and trans port properties is discussed. (C) 2000 Elsevier Science B.V. All rights res erved.