M. Bibes et al., Anisotropic magnetoresistance of (0 0 h), (0 h h) and (h h h) La2/3Sr1/3MnO3 thin films on (001) Si substrates, J MAGN MAGN, 211(1-3), 2000, pp. 206-211
The epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films with dif
ferent orientations on (0 0 1) Si substrates has been successfully achieved
by a suitable choice of the buffer heterostructure. The out-of-plane and i
n-plane microstructure has been carefully analysed and related to the magne
tocrystalline anisotropy. The dependence of the magnetoresistance (MR) as a
function of the angle between the current and the applied field has been e
xplored in a wide field range. At high field the magnetisation is saturated
whatever the direction of the field and we observe the intrinsic anisotrop
ic magnetoresistance (AMR) effect having a uniaxial anisotropy while at low
field the magnetocrystalline anisotropy induces higher-order angle depende
nce of the magnetoresistance. (C) 2000 Elsevier Science B.V. All rights res
erved.