The progress made in constructing an all-oxide spin valve based on the intr
insic, fully spin-polarized electron transport in Fe3O4 is discussed. Two p
ossible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interl
ayer coupling studies indicate that MgO is the more suitable spacer layer o
f the two. Thus far a limited magnetoresistive effect less than or equal to
0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have mad
e. Possible causes for this low magnetoresistive effect are discussed. (C)
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