Photoluminescence behavior of manganese-doped zinc silicate phosphors

Citation
Ks. Sohn et al., Photoluminescence behavior of manganese-doped zinc silicate phosphors, J AM CERAM, 82(10), 1999, pp. 2779-2784
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
82
Issue
10
Year of publication
1999
Pages
2779 - 2784
Database
ISI
SICI code
0002-7820(199910)82:10<2779:PBOMZS>2.0.ZU;2-R
Abstract
The purpose of the present study is to develop an understanding of the phot oluminescence properties of Mn2+-doped zinc silicate (Zn2SiO4:Mn) phosphors , which have served as a gree-emitting phosphor in many industrial applicat ions. Thus, several experimental techniques, such as time-resolved emission spectra, decay curves, and time-resolved photoluminescence excitation spec tra, have been conducted on Zn2SiO4:Mn phosphors, The characterization has been performed in terms of dopant concentration. The decay curves, together with the characteristic decay time, in particular, are measured as a funct ion of excitation-light wavelength, in the range of 200-520 nm, The decay b ehavior is strongly dependent on the excitation-light wavelength. The excit ation range is categorized into three regimes: the manganese direct excitat ion range, below the absorption-edge (E-T) energy level; the manganese ioni zation range, from E-T to the optical band-gap energy (E-g) of Zn2SiO4; and the intergap transition range, above the E-g energy level.