Effective method for evaluation of semiconductor laser quality

The measurements of one hundred 1.3 mu m planar buried crescent (PBC) struc ture InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semicond uctor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices. (C) 2000 Elsevier Sci ence Ltd. All rights reserved.