Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires

Authors
Grundmann, M Stier, O Schliwa, A Bimberg, D
Citation
M. Grundmann et al., Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires, PHYS REV B, 61(3), 2000, pp. 1744-1747
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
3
Year of publication
2000
Pages
1744 - 1747
Database
ISI
SICI code
1098-0121(20000115)61:3<1744:ESOCSQ>2.0.ZU;2-R
Abstract
The electronic properties of strained cleaved-edge-overgrowth quantum wires are calculated for structures in which the (001) quantum well has a larger lattice constant and band gap than the barrier and imposes tensile strain on the (110) quantum well. The lateral charge-carrier confinement is entire ly due to strain effects and not due to heterostructure barriers. Large loc alization energies of up to 90 meV are predicted from eight band k . p calc ulations. Symmetric, asymmetric, and interdiffused geometries in the In0.2A l0.8As/Al0.35Ga0.65As/GaAs system are investigated.