Model for a metal-insulator transition in antidot arrays induced by an external driving field

It is shown that a family of models associated with the kicked Harper model is relevant for cyclotron resonance experiments in an antidot array. For t his purpose a simplified model for electronic motion in a related model sys tem in the presence of a magnetic field and an ac electric field is develop ed. In the limit of a strong magnetic field it reduces to a model similar t o the kicked Harper model. This model is studied numerically and is found t o be extremely sensitive to the strength of the electric field. In particul ar, as the strength of the electric field is varied a metal-insulator trans ition may be found. The experimental conditions required for this transitio n are discussed.