Kondo physics in the single-electron transistor with ac driving

Citation
P. Nordlander et al., Kondo physics in the single-electron transistor with ac driving, PHYS REV B, 61(3), 2000, pp. 2146-2150
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
3
Year of publication
2000
Pages
2146 - 2150
Database
ISI
SICI code
1098-0121(20000115)61:3<2146:KPITST>2.0.ZU;2-E
Abstract
Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac volta ge applied to a nearby gate is investigated. A rich dependence of the linea r response conductance on the external frequency and driving amplitude is d emonstrated. At low frequencies a sufficiently strong ac potential produces sidebands of the Kondo peak in the spectral density of the dot, and a slow , roughly logarithmic decrease in conductance over several decades of frequ ency. At intermediate frequencies, the conductance of the dot displays an o scillatory behavior due to the appearance of Kondo resonances of the satell ites of the dot level. At high frequencies, the conductance of the dot can vary rapidly due to the interplay between photon-assisted tunneling and the Kondo resonance.