Low-temperature photon-drag effect in magnetic semiconductors

Authors
Nunes, OAC Agrello, DA Fonseca, ALA
Citation
Oac. Nunes et al., Low-temperature photon-drag effect in magnetic semiconductors, PHYS LETT A, 266(4-6), 2000, pp. 421-424
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
03759601 → ACNP
Volume
266
Issue
4-6
Year of publication
2000
Pages
421 - 424
Database
ISI
SICI code
0375-9601(20000228)266:4-6<421:LPEIMS>2.0.ZU;2-5
Abstract
The low-temperature photon drag (LTPD) effect due to direct spin-flip intra band photon absorption by conduction electrons during transitions between s pin sub-bands in degenerate magnetic semiconductors such as EuO is calculat ed. It is shown that the LTPD current consists essentially of a sharp peak at the band splitting frequency which shifts towards low frequencies as the temperature increases from T = 0 K. (C) 2000 Published by Elsevier Science B.V. All rights reserved.