QUANTUM EFFICIENCY OF CU2O ELECTRODE IN PHOTOELECTROCHEMICAL CELLS WITH AND WITHOUT BIAS

Citation
Ka. Khan et al., QUANTUM EFFICIENCY OF CU2O ELECTRODE IN PHOTOELECTROCHEMICAL CELLS WITH AND WITHOUT BIAS, Renewable energy, 11(3), 1997, pp. 293-298
Citations number
11
Categorie Soggetti
Energy & Fuels
Journal title
ISSN journal
09601481
Volume
11
Issue
3
Year of publication
1997
Pages
293 - 298
Database
ISI
SICI code
0960-1481(1997)11:3<293:QEOCEI>2.0.ZU;2-3
Abstract
The photoresponse of a p-type Cu2O him on copper is presented. The cur rent-voltage characteristics exhibit a large photocurrent with an onse t potential at cn. -0.2 V (S.C.E.). The electrode in the Cu2O/Pt biase d cell shows high quantum efficiency which is approaching 100% for wav elength lambda approximate to 300 nm. Studies show that even for poten tials just slightly more negative than V-on, the quantum efficiency is relatively large. This result may be explained either by a current do ubling phenomena or could be due to a contribution to additional band gaps which may er;ist at higher energies. The overall high quantum eff iciencies, moreover, can be obtained without the use of any external b ias if a TiO2 counter electrode is used. (C) 1997 Elsevier Science Ltd .