History dependence of peak effect in CeRu2 and V3Si: an analogy with the random field Ising systems

We present results of transport measurements showing distinct path dependen ce of the electrical resistance in the superconducting vortex state of sing le crystal samples of CeRu2 and V3Si. Resistance measured in the vortex sta te of both the systems prepared by held cooling (FC), indicates a relativel y higher degree of disorder than when it is prepared by isothermal variatio n of field. Small oscillations of magnetic field modify the resistance in t he FC state, highlighting the metastable nature of that state. An analogy i s drawn with the FC state of the random-held Ising systems. (C) 2000 Publis hed by Elsevier Science Ltd. All rights reserved.