Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers

Silicon light emitting devices, compatible with the conventional CMOS proce ss, have been fabricated and tested. The structure of the devices is based on a MOS capacitor where nanometer thick silicon/silicon dioxide multilayer s have been grown in the dielectric. Room temperature photo- and electrolum inescence were measured. While photoluminescence has been recognized as bei ng due to electron-hole recombination in the nanometer thick silicon layers , electroluminescence was mainly related to hot-electron relaxation in the substrate. The measured external quantum efficiency of the electroluminesce nce is about 5 x 10(-5). (C) 2000 Elsevier Science Ltd. All rights reserved .