Phonon sidebands of exciton bound to NN1 traps in GaAs1-xPx : N alloys

Using selective excitation technology, the phonon sidebands of NN1 pair emi ssion are observed in GaAs1-xPx: N (x = 0.88) alloys. Due to fluorescence l ine narrowing, the fine structure of phonon sidebands of NN1 pair emission, which is very similar to that of N, in GsAs(1-x)P(x): N and to that of NN1 in GaP:N, including TA, LA, LOAs and LO phonons, has been identified. The results experimentally confirm that the NN1 center does exist in GaAs1-xPx: N alloys. (C) 2000 Published by Elsevier Science Ltd. Ail rights reserved.