Model for thermal/electric-field poling of fused silica

Citation
Xm. Liu et al., Model for thermal/electric-field poling of fused silica, ACT PHY C E, 49(3), 2000, pp. 538-543
Citations number
25
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
3
Year of publication
2000
Pages
538 - 543
Database
ISI
SICI code
1000-3290(200003)49:3<538:MFTPOF>2.0.ZU;2-P
Abstract
Using the multiple-carrier model, the process for thermal/electric-field po ling in the fused silica is analyzed. The depletion region is proved to be composed of a positive charged layer, an ionosphere layer and a negative de pletion layer. The space-charges in two former layers are H3O+, O+, Al++ an d others, and the space-charge in the latter is drop Si--O-. The thermal st ability of the depletion region is determined by the strength of the ionosp here. In addition, the ion density distribution in the depletion region is derived. The results show that both the positive and the negative space-cha rge layers are approximately well-distributed, and the self-built electric field in the depletion layer is approximately distributed in triangle-form, the maximum of which is located inside the sample. This model proves that the second order susceptibility and the conversion efficiency of the second harmonic are proportional to the square-root and square of the applied de voltage, respectively.