LOW-THRESHOLD PROTON-IMPLANTED 1.3-MU-M VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS WITH DIELECTRIC AND WAFER-BONDED GAAS-ALAS BRAGG MIRRORS

Authors
QIAN Y ZHU ZH LO YH HUFFAKER DL DEPPE DG HOU HQ HAMMONS BE LIN W TU YK
Citation
Y. Qian et al., LOW-THRESHOLD PROTON-IMPLANTED 1.3-MU-M VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS WITH DIELECTRIC AND WAFER-BONDED GAAS-ALAS BRAGG MIRRORS, IEEE photonics technology letters, 9(7), 1997, pp. 866-868
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
7
Year of publication
1997
Pages
866 - 868
Database
ISI
SICI code
1041-1135(1997)9:7<866:LP1VT>2.0.ZU;2-3
Abstract
We demonstrate a new structure for long-wavelength (1.3-mu m) vertical -cavity top-surface-emitting lasers using proton implantation for curr ent confinement, Wafer-bonded GaAs-AlAs Bragg mirrors and dielectric m irrors are used for bottom and top mirrors, respectively, The gain med ium of the lasers consists of nine strain-compensated AlGaInAs quantum wells, A record low room temperature pulsed threshold current density of 1.13 kA/cm(2) has been achieved for 15-mu m diameter devices with a threshold current of 2 mA, The side-mode-suppression-ratio is greate r than 35 dB.