LOW-TEMPERATURE CONTINUOUS-WAVE OPERATION OF ALGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES

Authors
EGAWA T MURATA Y JIMBO T UMENO M
Citation
T. Egawa et al., LOW-TEMPERATURE CONTINUOUS-WAVE OPERATION OF ALGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES, IEEE photonics technology letters, 9(7), 1997, pp. 872-874
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
7
Year of publication
1997
Pages
872 - 874
Database
ISI
SICI code
1041-1135(1997)9:7<872:LCOOAV>2.0.ZU;2-D
Abstract
An AlGaAs-GaAs multiquantum-well vertical-cavity surface-emitting lase r (VCSEL) diode has been grown on a Si substrate using metalorganic ch emical vapor deposition. The VCSEL structure grown on a Si substrate c onsists of ten quantum well active layers and a 23-pair of AlAs-Al-0.1 Ga0.9As distributed Bragg reflector. The VCSEL on a Si substrate exhi bited a threshold current of 82 mA and a threshold current density of 4.2 kA/cm(2) under continuous-wave (CW) condition at 150 K. Electrolum inescence observation showed that optical degradation is caused by the generation and growth of dark-line defects.