SILICON-ON-INSULATOR (SOI) PHASED-ARRAY WAVELENGTH MULTI DEMULTIPLEXER WITH EXTREMELY LOW-POLARIZATION SENSITIVITY/

Citation
Pd. Trinh et al., SILICON-ON-INSULATOR (SOI) PHASED-ARRAY WAVELENGTH MULTI DEMULTIPLEXER WITH EXTREMELY LOW-POLARIZATION SENSITIVITY/, IEEE photonics technology letters, 9(7), 1997, pp. 940-942
Citations number
19
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
9
Issue
7
Year of publication
1997
Pages
940 - 942
Database
ISI
SICI code
1041-1135(1997)9:7<940:S(PWMD>2.0.ZU;2-Z
Abstract
We demonstrate the first phased-array wavelength multiplexer fabricate d in the silicon-on-insulator (SOI) waveguide technology, The four-cha nnel wavelength division multiplexer (WDM) has a channel spacing of 1. 9 nm centered at 1550-nm wavelength and a 3-dB channel bandwidth of 0. 72 nn, The crosstalk to neighboring channels is less than -22 dB and t he on chip insertion loss is below 6 dB for all channels, The TE-TM sh ift is less than 0.04 nm which is the smallest attained without compen sation techniques in any integrated optic technology.