L. Brissonneau et C. Vahlas, Precursors and operating conditions for the metal-organic chemical vapor deposition of nickel films, ANN CHIM-SC, 25(2), 2000, pp. 81-90
The different precursors that have been tested or that are actually in use
for the processing of thin films of nickel by the chemical vapor deposition
technique are reviewed Applications of thin films of nickel are presented.
Deposition conditions and characteristics of the films obtained from diffe
rent precursors are detailed. Ni(CO)(4), NiCp2, Ni(MeCp)(2), Ni(hfa)(2), Ni
(dmg)(2), and Ni(den)(2) appear as the most promising ones. The final choic
e of a precursor for the MOCVD of Ni films depends on requirements concerni
ng the process (e.g. safety issues, deposition temperature, growth rate) an
d the purity of the deposited films.