Precursors and operating conditions for the metal-organic chemical vapor deposition of nickel films

Citation
L. Brissonneau et C. Vahlas, Precursors and operating conditions for the metal-organic chemical vapor deposition of nickel films, ANN CHIM-SC, 25(2), 2000, pp. 81-90
Citations number
56
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX
ISSN journal
01519107 → ACNP
Volume
25
Issue
2
Year of publication
2000
Pages
81 - 90
Database
ISI
SICI code
0151-9107(200002)25:2<81:PAOCFT>2.0.ZU;2-#
Abstract
The different precursors that have been tested or that are actually in use for the processing of thin films of nickel by the chemical vapor deposition technique are reviewed Applications of thin films of nickel are presented. Deposition conditions and characteristics of the films obtained from diffe rent precursors are detailed. Ni(CO)(4), NiCp2, Ni(MeCp)(2), Ni(hfa)(2), Ni (dmg)(2), and Ni(den)(2) appear as the most promising ones. The final choic e of a precursor for the MOCVD of Ni films depends on requirements concerni ng the process (e.g. safety issues, deposition temperature, growth rate) an d the purity of the deposited films.