Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

Citation
Ww. Chow et al., Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers, APPL PHYS L, 76(13), 2000, pp. 1647-1649
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
13
Year of publication
2000
Pages
1647 - 1649
Database
ISI
SICI code
0003-6951(20000327)76:13<1647:TAOFAF>2.0.ZU;2-P
Abstract
Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of th e interplay of quantum-confined Stark effect and many-body interactions. Fo r an In0.2Ga0.8N/GaN gain medium, the antiguiding factor in a thick 4 nm qu antum well is considerably smaller than that for a narrow 2 nm one. As a re sult, lasers with the thicker quantum well maintain fundamental-mode operat ion with wider stripe widths and at significantly higher excitation levels. (C) 2000 American Institute of Physics. [S0003-6951(00)01313-9].