Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

GaAs has been selectively grown in a hexagonally ordered array of nanometer -scale holes with a density as high as similar to 10(11)/cm(2) by metalorga nic chemical vapor deposition. This array of holes was created using block copolymer lithography, in which a thin layer of diblock copolymer was used as an etching mask to make dense holes in a 15-nm-thick SiNx film. These se lectively grown nanoscale features are estimated to be 23 nm in diameter wi th narrow lateral size and height distributions as characterized by field-e mission scanning electron microscopy and tapping mode atomic force microsco py. The narrow size distribution and uniform spatial position of the nanosc ale dots we report offer potential advantages over self-assembled dots grow n by the Stranski-Krastanow mode. (C) 2000 American Institute of Physics. [ S0003-6951(00)02913-2].