p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrate s using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organom etallic sources. After postgrowth rapid thermal annealing, the ZnS layers s howed p-type conductivity with hole concentrations up to 10(18) cm(-3). Pho toluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium wa s diffused from a LiH solid source into ZnS layers grown without the nitrog en precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal. (C) 2000 American Institute of Physics. [S0003-6 951(00)00413-7].