Hole activation from GaAs : Zn nanoclusters for p-type conduction in ZnSe

Growth of p-type ZnSe has been limited to nitrogen doping in molecular-beam epitaxy. As an alternative to nitrogen doping, GaAs cluster doping is prop osed in this letter, where GaAs has small lattice mismatch of 0.28% to ZnSe and can potentially be heavily doped in p type. Hole activation to the val ence band of the ZnSe layers could be observed by the reduction of the thic kness of the GaAs layers in order to form nanoclusters. This was achieved w ith alternate supplies of triethylgallium and trisdimethylaminoarsenic, and the net acceptor concentration of similar to 10(17) cm(-3) was observed. ( C) 2000 American Institute of Physics. [S0003-6951(00)00313-2].