Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes

SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by the metalorganic decomposition technique at annealing temperatures of 600 and 650 degrees C on Pt/Ti/SiO2/Si substrates coated by (100)-oriented LaNiO3 (LNO) metal ox ide thin films, which were fabricated by the sol-gel technique combined wit h a layer-by-layer annealing method at 600 degrees C. A (200)-predominant S BT thin film can be formed on LaNiO3(100)/Pt/Ti/SiO2/Si substrate at 600 de grees C. The effect of the LNO oxide electrode on the dielectric and ferroe lectric properties of SBT thin film annealed at 600 degrees C was studied. Although the remanent polarization of the (200)-predominant SBT thin film i s not as large as expected, the film can be uniformly polarized and imaged using an atomic force microscope in the piezoelectric mode. (C) 2000 Americ an Institute of Physics. [S0003-6951(00)01213-4].