Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

We have developed a simple model for the carrier capture and escape process es in quantum-well (QW) lasers, which yields an analytical expression for t he ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling eff ect. It also shows an exponential dependence of the escape time on the effe ctive barrier height and on the inverse of the temperature. A comparison be tween experimental and calculated values for InGaAs/GaAs QW lasers is prese nted showing a good agreement. (C) 2000 American Institute of Physics. [S00 03-6951(00)02412-8].