Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel

Near-infrared radiation of wavelength 1.5 mu m is up-converted to a visible wavelength of 818 nm by internal photoemission in a Schottky diode with a modulation p-doped channel. The near-infrared light incident upon the metal -semiconductor interface excites electrons from the metal into the semicond uctor. The electrons then drift into the quantum well where they recombine radiatively, producing luminescence at the shorter wavelength of 818 nm. Th e intensity of the luminescence is strongly dependent on bias, and turns on at a forward bias of -0.7 V. (C) 2000 American Institute of Physics. [S000 3-6951(00)03712-8].