We have directly measured the stress evolution during metal-organic chemica
l vapor deposition of AlGaN/GaN heterostructures on sapphire. In situ stres
s measurements were correlated with ex situ microstructural analysis to det
ermine directly a critical thickness for cracking and the subsequent relaxa
tion kinetics of tensile-strained AlxGa1-xN grown on GaN. Cracks appear to
initiate the formation of misfit dislocations at the AlGaN/GaN interface, w
hich account for the majority of the strain relaxation. (C) 2000 American I
nstitute of Physics. [S0003-6951(00)01212-2].