Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, f ollowing a Stranski-Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blu e-violet photoluminescence of the dots is observed, persisting up to room t emperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples. (C) 2000 Amer ican Institute of Physics. [S0003-6951(00)00212-6].