Indium segregation in InGaN quantum-well structures

Authors
Duxbury, N Bangert, U Dawson, P Thrush, EJ Van der Stricht, W Jacobs, K Moerman, I
Citation
N. Duxbury et al., Indium segregation in InGaN quantum-well structures, APPL PHYS L, 76(12), 2000, pp. 1600-1602
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
12
Year of publication
2000
Pages
1600 - 1602
Database
ISI
SICI code
0003-6951(20000320)76:12<1600:ISIIQS>2.0.ZU;2-4
Abstract
Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis perfor med in a dedicated scanning transmission electron microscope. The In fluctu ations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing. (C) 2000 Ame rican Institute of Physics. [S0003-6951(00)00911-6].