Highly conductive diamond probes for scanning spreading resistance microscopy

Citation
T. Hantschel et al., Highly conductive diamond probes for scanning spreading resistance microscopy, APPL PHYS L, 76(12), 2000, pp. 1603-1605
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
12
Year of publication
2000
Pages
1603 - 1605
Database
ISI
SICI code
0003-6951(20000320)76:12<1603:HCDPFS>2.0.ZU;2-8
Abstract
Scanning spreading resistance microscopy (SSRM) is a powerful method for th e characterization of Si semiconductor devices based on atomic force micros copy (AFM). It requires conductive probe tips made of doped diamond. Althou gh various solid diamond probes have been fabricated, they could not satisf y the requirements for SSRM. Therefore, we have developed a SSRM probe comp osed of a pyramidal diamond tip attached to a Si cantilever. This letter de scribes the probe fabrication process briefly and presents excellent SSRM m easurements obtained on Si calibration samples. Solid diamond tips integrat ed in Si cantilevers were used for SSRM showing a significantly higher dyna mic range than the conductive probes known to date. (C) 2000 American Insti tute of Physics. [S0003-6951(00)00711-7].