Scanning spreading resistance microscopy (SSRM) is a powerful method for th
e characterization of Si semiconductor devices based on atomic force micros
copy (AFM). It requires conductive probe tips made of doped diamond. Althou
gh various solid diamond probes have been fabricated, they could not satisf
y the requirements for SSRM. Therefore, we have developed a SSRM probe comp
osed of a pyramidal diamond tip attached to a Si cantilever. This letter de
scribes the probe fabrication process briefly and presents excellent SSRM m
easurements obtained on Si calibration samples. Solid diamond tips integrat
ed in Si cantilevers were used for SSRM showing a significantly higher dyna
mic range than the conductive probes known to date. (C) 2000 American Insti
tute of Physics. [S0003-6951(00)00711-7].