Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

High-quality (Pb, La)(Ti, Zr)O-3 films were grown on n-GaN. The film thickn ess ranged from 0.5 to 5 mu m. The material was prepared by a chemical solu tion method with compositions of 8/65/35 and 0/52/48. The films grown on Ga N buffered with a thin layer of indium in oxide were highly textured and ex hibited excellent ferroelectric properties with P-r=20-26 mu C/cm(2). A lar ge field-induced birefringence of 0.025 was measured in the film with a com position of 8/65/35 under a field strength of 2x10(5) V/cm. (C) 2000 Americ an Institute of Physics. [S0003-6951(00)02512-2].