Galvanostatic electrocrystallization of a TTF-based donor-radical (ETBN) ha
s afforded an ion-radical salt. The radical site of ETBN is intact in the p
repared salt and showed paramagnetic behavior. The salt is a semiconductor
with conductivity of 10(-2) S/cm at room temperature. Conductivity and magn
etic properties are explained as a new type of an ion-radical salt derived
from a pi-conjugated donor-radical. (C) 2000 Elsevier Science B.V. All righ
ts reserved.