In this work, nanometer scale electrically conducting lines and quantu
m structures on chromium (Cr) films have been fabricated with an ambie
nt scanning tunnelling microscope and a subsequent CR-14 chromium etch
. The line width of these structures is approximately 60 nm and the he
ight of the lines is approximately 10 nm. In addition, experiments hav
e been performed to determine the Cr etch rate in CR-14 etchant and th
e thickness of the Cr layer that could be oxidized through by the STM
tunnelling current.