Complementary neu-GaAs structure

A neu-MOS like transistor structure using complementary GaAs HIGFET transis tors, neu-GaAs, which uses capacitively coupled inputs onto a floating gate is presented. The design and simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for a very significant re duction in transistor count and area for equal power dissipation, through t he use of neu-GaAs in VLSI design. A neu-GaAs design is presented which doe s not require floating gate initialisation due to the presence of a small g ate leakage current in the HIGFET structure.